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SLM2186 600V IGBT/MOS驱动芯片 降低损耗节省成本完全代替IR2186

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发表于2020-12-07 15:08:14 | 只看该作者
1# 电梯直达

SLM2186 600V IGBT/MOS驱动芯片 降低损耗节省成本完全代替IR2186

600V High and Low Side Driver

PRODUCT SUMMARY

• VOFFSET 600 V max.

• IO+/- 4 A / 4 A

• VOUT 10 V - 20 V

• ton/off (typ.) 170ns / 170ns

GENERAL DESCRIPTION

The SLM2186 is a high voltage, high speed power MOSFET and IGBT drivers with independent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

FEATURES

• Floating channel designed for bootstrap operation

• Fully operational to +600 V

• Low VCC operation

• Tolerant to negative transient voltage, dV/dt immune

• Gate drive supply range from 10 V to 20 V

• Undervoltage lockout for both channels

• 3.3 V, and 5 V logic compatible

• CMOS Schmitt-triggered inputs with pull-down

• Matched propagation delay for both channels

• Outputs in phase with inputs

• RoHS compliant

• SOIC-8 package


 

 



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