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AP15N06 NMOS SOT89-3L 电池保护MOS管 n沟道增强型mos场效应管
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发表于2023-05-23 15:51:11
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1#
电梯直达
Super Low Gate ChargeGreen Device AvailableExcellent Cdv/dt effect declineAdvanced high cell density Trenchtechnology Description The 15N06is the highestperformance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate chargefor most of the synchronous buck converterapplications .The meet the RoHS and Green Productrequirement, 100% EAS guaranteed with fullfunction reliability approved. |
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